Substrate processing apparatus

ABSTRACT

A method of processing a substrate in a substrate processing apparatus that is arranged adjacent to an exposure device and includes first, second and third processing units, includes forming a photosensitive film on the substrate by said first processing unit before exposure processing by said exposure device and applying washing processing to the substrate by supplying a washing liquid to the substrate in said second processing unit after the formation of said photosensitive film and before the exposure processing. The method also includes applying drying processing to the substrate in said second processing unit after the washing processing by said second processing unit and before the exposure processing and applying development processing to the substrate by said third processing unit after the exposure processing. Applying the drying processing to the substrate includes the step of supplying an inert gas onto the substrate, to which the washing liquid is supplied.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a division of U.S. patent application Ser. No.12/698,862, filed Feb. 2, 2010, now abandoned, which is a division ofU.S. patent application Ser. No. 11/295,216, filed Dec. 6, 2005, nowabandoned, which claims priority to Japanese Patent Application No.2004-353120, filed Dec. 6, 2004, Japanese Patent Application2005-095783, filed Mar. 29, 2005, and Japanese Patent Application No.2005-267331, filed on Sep. 14, 2005. The disclosures of Ser. No.11/295,216, JP 2004-353120, 2005-095783, and JP 2005-267331 are herebyincorporated by reference in their entirety for all purposes.

The present application is related to the following four applicationsfiled Dec. 6, 2005, and commonly owned: 1) U.S. patent application Ser.No. 11/294,877, entitled “SUBSTRATE PROCESSING APPARATUS AND SUBSTRATEPROCESSING METHOD,” 2) U.S. patent application Ser. No. 11/295,257,entitled “SUBSTRATE PROCESSING APPARATUS,” 3) U.S. patent applicationSer. No. 11/294,727, entitled “SUBSTRATE PROCESSING APPARATUS,” and 4)U.S. patent application Ser. No. 11/295,240, entitled “SUBSTRATEPROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD.”

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to substrate processing apparatuses forapplying processing to substrates.

2. Description of the Background Art

A substrate processing apparatus is used to apply a variety ofprocessing to substrates such as semiconductor substrates, substratesfor use in liquid crystal displays, plasma displays, optical disks,magnetic disks, magneto-optical disks, photomasks, and other substrates.

Such a substrate processing apparatus typically applies a plurality ofsuccessive processing to a single substrate. The substrate processingapparatus as described in JP 2003-324139 A comprises an indexer block,an anti-reflection film processing block, a resist film processingblock, a development processing block, and an interface block. Anexposure device is arranged adjacent to the interface block as anexternal device separate from the substrate processing apparatus.

In the above-described substrate processing apparatus, a substrate iscarried from the indexer block into the anti-reflection film processingblock and the resist film processing block, where the formation of ananti-reflection film and resist film coating processing are applied tothe substrate. The substrate is then carried to the exposure devicethrough the interface block. After exposure processing has been appliedto the resist film on the substrate by the exposure device, thesubstrate is transported to the development processing block through theinterface block. In the development processing block, developmentprocessing is applied to the resist film on the substrate to form aresist pattern thereon, and the substrate is subsequently carried intothe indexer block.

With recent improvements in the density and integration of devices,making finer resist patterns have become very important. Conventionalexposure devices typically perform exposure processing by providingreduction projection of a reticle pattern on a substrate through aprojection lens. With such conventional exposure devices, however, theline width of an exposure pattern is determined by the wavelength of thelight source of an exposure device, thus making it impossible to make aresist pattern finer than that.

For this reason, a liquid immersion method is suggested as a projectionexposure method allowing for finer exposure patterns (refer to, e.g.,WO99/49504 pamphlet). In the projection exposure device according to theWO99/49504 pamphlet, a liquid is filled between a projection opticalsystem and a substrate, resulting in a shorter wavelength of exposurelight on a surface of the substrate. This allows for a finer exposurepattern.

However, in the projection exposure device according to theaforementioned WO99/49504 pamphlet, exposure processing is performedwith the substrate and the liquid being in contact with each other.Accordingly, part of the component of a resist applied on the substrateis eluted in the liquid. The resist component eluted in the liquidremains on a surface of the substrate, which may become the cause of adefect.

The resist component eluted in the liquid contaminates the lens of theexposure device. This may cause a defective dimension and a defectiveshape of the exposure pattern.

SUMMARY OF THE INVENTION

It is an object of the invention to provide a substrate processingapparatus capable of preventing a component of a photosensitive materialon a substrate from being eluted in a liquid in an exposure device.

(1) A substrate processing apparatus according to one aspect of theinvention that is arranged adjacent to an exposure device comprises aprocessing section for applying processing to a substrate, and aninterface that is provided on one end of the processing section forexchanging the substrate between the processing section and the exposuredevice, wherein the processing section includes a first processing blockthat includes a first processing unit that forms a photosensitive filmmade of photosensitive material, a first thermal processing unit thatthermally treats the substrate, and a first transport unit thattransports the substrate, a second processing block that includes asecond processing unit that applies a development processing to thesubstrate after the exposure processing by the exposure device, a secondthermal processing unit that thermally treats the substrate, and asecond transport unit that transports the substrate, and a thirdprocessing block that includes a third processing unit that washes thesubstrate after the formation of the photosensitive film by the firstprocessing unit and before the exposure processing by the exposuredevice, and a third transport unit that transports the substrate.

In the substrate processing apparatus, a photosensitive film made of aphotosensitive material is formed on the substrate by the firstprocessing unit in the first processing block. Then, the substrate istransported to the first thermal processing unit by the first transportunit, where the substrate is subjected to given thermal treatment. Thesubstrate is subsequently transported to an adjacent other processingblock by the first transport unit.

Next, in the third processing block, the substrate is subjected to thewashing processing by the third processing unit. Then, the substrate istransported to the exposure device from the processing section throughthe interface, where the substrate is subjected to exposure processing.The substrate after the exposure processing is subsequently transportedto the processing section from the exposure device through theinterface.

After that, in the second processing block, the substrate is subjectedto development processing in the second processing unit. Then, thesubstrate is transported to the second thermal processing unit by thesecond transport unit, where the substrate is subjected to given thermaltreatment. The substrate is subsequently transported to an adjacentother processing block by the second transport unit.

In this way, the substrate is subjected to washing processing by thethird processing unit in the third processing block before the exposureprocessing by the exposure device. Part of the component of thephotosensitive film formed on the substrate by the first processing unitis thus eluted, and washed away. In this case, even if the substrate incontact with a liquid is subjected to the exposure processing by theexposure device, the component of the photosensitive material on thesubstrate is hardly eluted. This reduces contamination in the exposuredevice while preventing the component of the photosensitive materialfrom remaining on a surface of the substrate. As a result, processingdefects of the substrate that may be generated in the exposure devicecan be reduced.

In addition, the substrate processing apparatus has the structure inwhich the third processing block is added to the existing substrateprocessing apparatus having the first and second processing blocks. Thisresults in reduced processing defects of the substrate that may begenerated in the exposure device.

(2) The third processing block may further include a third thermalprocessing unit that thermally treats the substrate, and is arrangedadjacent to the interface. In this case, the washing processing can beapplied to the substrate by the third processing unit immediately beforethe exposure processing by the exposure device. This enables thetransport route for the substrate after the washing processing to theexposure device to be shortened. This prevents the attachment ofparticles and the like in the atmosphere to the substrate in thetransport process after the washing processing.

In addition, the substrate is subjected to a post-exposure bake (PEB) bythe third thermal processing unit immediately after the exposureprocessing, and then the development processing can be applied to thesubstrate in the second processing block subsequently. This makes itpossible to smoothly apply the post-exposure bake and the developmentprocessing to the substrate.

(3) The processing section further comprises a fourth processing blockthat includes a fourth processing unit that forms an anti-reflectionfilm on the substrate before the formation of the photosensitive film bythe first processing unit, a fourth thermal processing unit thatthermally treats the substrate, and a fourth transport unit thattransports the substrate. In this case, the anti-reflection film isformed on the substrate by the fourth processing unit, which preventsthe potential standing wave and halation during the exposure processing.Therefore, the generation of the processing defects of the substrateduring the exposure processing can be sufficiently reduced.

(4) The substrate processing apparatus may further comprise an indexerthat is arranged adjacent to another end of the processing section andcarries in the substrate to the processing section and carries out thesubstrate from the processing section, wherein the fourth processingblock is arranged adjacent to the indexer. In this case, theanti-reflection film is formed in the fourth processing blockimmediately after the transporting of the substrate to the processingsection, and then the photosensitive film can be formed in the firstprocessing block subsequently. This enables the formations of theanti-reflection film and the photosensitive film on the substratesmoothly.

(5) The interface may include a fifth processing unit that applies givenprocessing to the substrate, a platform on which the substrate istemporarily mounted, a fifth transport unit that transports thesubstrate between the processing section, the fifth processing unit, andthe platform, and a sixth transport unit that transports the substratebetween the platform and the exposure device.

In this case, the substrate is transported to the fifth processing unitfrom the processing section by the fifth transport unit. The substrateis subjected to the given processing by the fifth processing unit, andthen transported to the platform by the fifth transport unit. Afterthis, the substrate is transported to the exposure device from theplatform by the sixth transport unit. The substrate is subjected to theexposure processing by the exposure device, and then transported to theplatform from the exposure device by the sixth transport unit. Afterthis, the substrate is transported to the processing section from theplatform by the fifth transport unit.

In this way, the disposition of the fifth processing unit in theinterface and the transport of the substrate by the two transport unitsenables the addition of processing contents without increasing thefootprint of the substrate processing apparatus.

(6) The fifth transport unit may include first and second holders forholding the substrate, the fifth transport unit may hold the substratewith the first holder during the transport of the substrate before theexposure processing by the exposure device, and may hold the substratewith the second holder during the transport of the substrate after theexposure processing by the exposure device, the sixth transport unit mayinclude third and fourth holders for holding the substrate, and thesixth transport unit may hold the substrate with the third holder duringthe transport of the substrate before the exposure processing by theexposure device, and may hold the substrate with the fourth holderduring the transport of the substrate after the exposure processing bythe exposure device.

In this case, the first and third holders are used during the transportof the substrate to which no liquid is attached before the exposureprocessing, while the second and fourth holders are used during thetransport of the substrate to which a liquid is attached after theexposure processing. This prevents a liquid from attaching to the firstand third holders, which prevents the attachment of a liquid to thesubstrate before the exposure processing. This makes it possible toprevent contamination of the substrate due to the attachment ofparticles and the like in the atmosphere. As a result, it is possible toprevent contamination in the exposure device, so that the processingdefects of the substrate that may be generated in the exposure devicecan be reduced.

(7) The second holder may be provided below the first holder, and thefourth holder may be provided below the third holder. This prevents aliquid that drops from the second and fourth holders and substrates heldthereon from attaching to the first and third holders and substratesheld thereon. This reliably prevents a liquid from attaching to thesubstrate before the exposure processing.

(8) The fifth processing unit may include an edge exposure unit thatsubjects a peripheral portion of the substrate to exposure. In thiscase, the peripheral portion of the substrate is subjected to theexposure processing by the edge exposure unit.

(9) The third processing unit may further dry the substrate afterwashing the substrate.

This prevents the attachment of particles and the like in the atmosphereto the washed substrate. Also, if the washing liquid remains on thewashed substrate, the component of the photosensitive material may beeluted in the residual washing liquid. Thus, by drying the washedsubstrate, it is possible to prevent the component of the film on thesubstrate from being eluted in the washing liquid remaining on thesubstrate. It is therefore possible to reliably prevent a defectiveshape of the photosensitive film formed on the substrate and thecontamination inside the exposure device. As a result of the foregoing,processing defects of the substrate are reliably prevented.

(10) The third processing unit may comprise a substrate holding devicethat holds the substrate substantially horizontally, a rotation-drivingdevice that rotates the substrate held on the substrate holding deviceabout an axis vertical to the substrate, a washing liquid supplier thatsupplies a washing liquid onto the substrate held on the substrateholding device, and an inert gas supplier that supplies an inert gasonto the substrate after the washing liquid has been supplied onto thesubstrate by the washing liquid supplier.

In the third processing unit, the substrate is held on the substrateholding device substantially horizontally, and the substrate is rotatedabout the axis vertical to the substrate by the rotation-driving device.Then, the washing liquid is supplied onto the substrate from the washingliquid supplier, followed by the supply of the inert gas from the inertgas supplier.

In this case, since the substrate is rotated as the washing liquid issupplied onto the substrate, the washing liquid on the substrate movestoward the peripheral portion of the substrate by the centrifugal forceand splashed away. This prevents the component of the photosensitivematerial eluted in the washing liquid from remaining on the substrate.In addition, since the substrate is rotated as the inert gas is suppliedonto the substrate, the washing liquid remaining on the substrate afterthe washing of the substrate is efficiently removed. This reliablyprevents the deposits of particles and the like from remaining on thesubstrate and the substrate is reliably dried. Therefore, during thetransport of the washed substrate to the exposure device, it is possibleto reliably prevent the component of photosensitive material on thesubstrate from being further eluted in the washing liquid remaining onthe substrate. As a result of the foregoing, it is possible to reliablyprevent a defective shape of the photosensitive film formed on thesubstrate and the contamination inside the exposure device.

(11) The inert gas supplier may supply the inert gas so that the washingliquid supplied onto the substrate from the washing liquid supplier isremoved from the substrate as the washing liquid moves outwardly fromthe center of the substrate.

This prevents the washing liquid from remaining on the center of thesubstrate, thus reliably preventing the generation of dry marks (drystains) on a surface of the substrate. In addition, during the transportof the washed substrate to the exposure device, it is possible toreliably prevent the component of photosensitive material on thesubstrate from being further eluted in the washing liquid remaining onthe substrate. As a result of the foregoing, processing defects of thesubstrate are more reliably prevented.

(12) The third processing unit may further comprise a rinse liquidsupplier that supplies a rinse liquid onto the substrate after thesupply of the washing liquid from the washing liquid supplier and beforethe supply of the inert gas from the inert gas supplier.

This allows the washing liquid to be reliably washed away by the rinseliquid, making it possible to prevent the component of thephotosensitive material eluted in the washing liquid from remaining onthe substrate more reliably.

(13) The inert gas supplier may supply the inert gas so that the rinseliquid supplied onto the substrate from the rinse liquid supplier isremoved from the substrate as the rinse liquid moves outwardly from thecenter of the substrate.

This prevents the rinse liquid from remaining on the center of thesubstrate, which prevents the generation of dry marks on the surface ofthe substrate reliably. Also, during the transport of the washedsubstrate to the exposure device, it is possible to reliably prevent thecomponent of photosensitive material on the substrate from being furthereluted in the rinse liquid remaining on the substrate. As a result ofthe foregoing, it is possible to prevent processing defects of thesubstrate more reliably.

(14) The third processing unit may wash the substrate by supplying afluid mixture containing a washing liquid and a gas onto the substratefrom a fluid nozzle.

Since the fluid mixture discharged from the fluid nozzle contains finedroplets, any contaminants attached on the surface of the substrate arestripped off, even if the surface has irregularities. Moreover, even ifthe film on the substrate has low wettability, the fine droplets stripoff the contaminants on the substrate surface.

Consequently, even if the solvent or the like in the film on thesubstrate is sublimated and the sublimates are attached to the substrateagain before the exposure processing, the sublimates attached to thesubstrate can be reliably removed by the third processing unit. It istherefore possible to reliably prevent the contamination inside theexposure device. As a result of the foregoing, processing defects of thesubstrate can be reliably reduced.

In addition, adjusting the flow rate of the gas allows adjustments to beeasily made to the detergency in washing the substrate. Thus, when thefilm on the substrate is prone to damage, damage to the film on thesubstrate can be prevented by weakening the detergency. Toughcontaminants on the substrate surface can also be removed reliably bystrengthening the detergency. By adjusting the detergency in this wayaccording to the properties of the film on the substrate and the degreeof contamination, it is possible to prevent damage to the film on thesubstrate and wash the substrate reliably.

(15) The gas may be an inert gas. In this case, it is possible toprevent a chemical influence upon the film on the substrate and thewashing liquid while removing the contaminants on the substrate surfacemore reliably, even if a chemical solution is used as washing liquid.

(16) The third processing unit may further dry the substrate afterwashing the substrate.

This prevents the attachment of particles and the like in the atmosphereto the washed substrate. Also, if the washing liquid remains on thewashed substrate, the component of the film formed on the substrate maybe eluted in the residual washing liquid. Thus, by drying the washedsubstrate, it is possible to prevent the component of the film on thesubstrate from being eluted in the washing liquid remaining on thesubstrate. It is therefore possible to reliably prevent a defectiveshape of the photosensitive film formed on the substrate and thecontamination inside the exposure device. As a result of the foregoing,processing defects of the substrate are reliably prevented.

(17) The third processing unit may include an inert gas supplier thatdries the substrate by supplying an inert gas onto the substrate. Theuse of the inert gas prevents a chemical influence upon the film on thesubstrate and the substrate is reliably dried.

(18) The fluid nozzle may function as the inert gas supplier. In thiscase, the inert gas is supplied onto the substrate from the fluid nozzleto apply drying processing to the substrate. This obviates the need toprovide the inert gas supplier separately from the fluid nozzle. As aresult, the washing and drying processing can be reliably applied to thesubstrate with a simple structure.

(19) The third processing unit may further includes a substrate holdingdevice that holds the substrate substantially horizontally, and arotation-driving device that rotates the substrate held on the substrateholding device about an axis vertical to the substrate.

In the third processing unit, the substrate is held on the substrateholding device substantially horizontally, and the substrate is rotatedabout the axis vertical to the substrate by the rotation-driving device.Further, the fluid mixture is supplied onto the substrate from the fluidnozzle, followed by the supply of the inert gas from the inert gassupplier.

In this case, since the substrate is rotated as the fluid mixture issupplied onto the substrate, the fluid mixture on the substrate movestoward the peripheral portion of the substrate by the centrifugal forceand splashed away. This reliably prevents the deposits of particles andthe like removed by the fluid mixture from remaining on the substrate.In addition, since the substrate is rotated as the inert gas is suppliedonto the substrate, the fluid mixture remaining on the substrate afterthe washing of the substrate is efficiently removed. This reliablyprevents the deposits of particles and the like from remaining on thesubstrate and the substrate dried reliably. As a result, processingdefects of the substrate are prevented reliably.

(20) The third processing unit may supply the inert gas so that thefluid mixture supplied onto the substrate from the fluid nozzle isremoved from the substrate as the fluid mixture moves outwardly from thecenter of the substrate.

This prevents the fluid mixture from remaining on the center of thesubstrate, thus reliably preventing the generation of dry marks on asurface of the substrate. Accordingly, processing defects of thesubstrate are prevented reliably.

(21) The third processing unit may further include a rinse liquidsupplier that supplies a rinse liquid onto the substrate, after thesupply of the fluid mixture from the fluid nozzle and before the supplyof the inert gas from the inert gas supplier.

This allows the fluid mixture to be reliably washed away by the rinseliquid, thus reliably preventing the deposits of particles and the likefrom remaining on the substrate.

(22) The fluid nozzle may function as the rinse liquid supplier. In thiscase, the rinse liquid is supplied from the fluid nozzle. This obviatesthe need to provide the rinse liquid supplier separately from the fluidnozzle. As a result, the washing and drying processing can be reliablyapplied to the substrate with a simple structure.

(23) The third processing unit may supply the inert gas so that therinse liquid supplied onto the substrate from the rinse liquid supplieris removed from the substrate as the rinse liquid moves outwardly fromthe center of the substrate.

This prevents the rinse liquid from remaining on the center of thesubstrate, thus reliably preventing the generation of dry marks on thesurface of the substrate. Accordingly, processing defects of thesubstrate are prevented reliably.

(24) The fluid nozzle may have a liquid flow passage through which aliquid flows, a gas flow passage through which a gas flows, a liquiddischarge port having an opening that communicates with the liquid flowpassage, and a gas discharge port that is provided near the liquiddischarge port and has an opening that communicates with the gas flowpassage.

In this case, the washing liquid flows through the liquid flow passage,and is discharged from the liquid discharge port, while the gas flowsthrough the gas flow passage, and is discharged from the gas dischargeport. The washing liquid and gas are mixed outside the fluid nozzle. Amist-like fluid mixture is thus generated.

In this way, the fluid mixture is generated by mixing the washing liquidand the gas outside the fluid nozzle. This obviates the need to providespace for mixing the washing liquid and the gas inside the fluid nozzle.As a result, the size of the fluid nozzle can be reduced.

According to the invention, the substrate is washed in the thirdprocessing block before the exposure processing by the exposure device.In this case, even if the substrate in contact with a liquid issubjected to the exposure processing by the exposure device, thecomponent of the photosensitive material on the substrate is hardlyeluted. This prevents contamination inside the exposure device whilepreventing the component of the photosensitive material from remainingon a surface of the substrate. As a result, processing defects of thesubstrate that may be generated in the exposure device can be reduced.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a substrate processing apparatus according to afirst embodiment of the invention;

FIG. 2 is a side view of the substrate processing apparatus in FIG. 1that is seen from the +X direction;

FIG. 3 is a side view of the substrate processing apparatus in FIG. 1that is seen from the −X direction;

FIG. 4 is a diagram for use in illustrating the configuration of awashing processing unit;

FIGS. 5 (a), 5 (b), and 5 (c) are diagrams for use in illustrating theoperation of the washing processing unit;

FIG. 6 is a schematic diagram of a nozzle in which a nozzle for washingprocessing and a nozzle for drying processing are formed integrally;

FIG. 7 is a schematic diagram showing another example of the nozzle fordrying processing;

FIGS. 8 (a), 8 (b), and 8 (c) are diagrams for use in illustrating amethod of applying drying processing to a substrate using the nozzle inFIG. 7;

FIG. 9 is a schematic diagram showing another example of the nozzle fordrying processing;

FIG. 10 is a schematic diagram showing another example of the dryingprocessing unit;

FIG. 11 is a diagram for use in illustrating a method of applying dryingprocessing to the substrate using the drying processing unit in FIG. 10;

FIG. 12 is a diagram for use in illustrating the configuration and theoperation of the interface transport mechanism.

FIG. 13 is a longitudinal cross section showing an example of theinternal structure of a two-fluid nozzle for use in washing and dryingprocessing; and

FIGS. 14 (a), 14 (b), and 14 (c) are diagrams for use in illustrating amethod of applying drying processing to the substrate using thetwo-fluid nozzle in FIG. 13.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

A substrate processing apparatus according to an embodiment of theinvention will be described with reference to the drawings. A substrateas used in the specification includes a semiconductor substrate, asubstrate for a liquid crystal display, a substrate for a plasmadisplay, a glass substrate for a photomask, a substrate for an opticaldisk, a substrate for a magnetic disk, a substrate for a magneto-opticaldisk, and a substrate for a photomask.

FIG. 1 is a plan view of the semiconductor laser apparatus according tothe embodiment of the invention.

Each of FIG. 1 and the subsequent drawings is accompanied by the arrowsthat indicate X, Y, and Z directions perpendicular to one another forclarification of positions. The X and Y directions are perpendicular toeach other in a horizontal plane, and the Z direction corresponds to thevertical direction. In each of the directions, the direction toward anarrow is defined as +direction, and the opposite direction is defined as−direction. The rotation direction about the Z direction is defined as θdirection.

As shown in FIG. 1, the substrate processing apparatus 500 includes anindexer block 9, an anti-reflection film processing block 10, a resistfilm processing block 11, a development processing block 12, a washingprocessing block 13, and an interface block 14. An exposure device 15 isarranged adjacent to the interface block 14. The exposure device 15applies exposure processing to substrates W by a liquid immersionmethod.

Each of the indexer block 9, the anti-reflection film processing block10, the resist film processing block 11, the development processingblock 12, the washing processing block 13, and the interface block 14will hereinafter be referred to as a processing block.

The indexer block 9 includes a main controller (controller) 30 forcontrolling the operation of each processing block, a plurality ofcarrier platforms 40, and an indexer robot IR. The indexer robot IR hasa hand IRH for receiving and transferring the substrates W.

The anti-reflection film processing block 10 includes thermal processinggroups 100, 101 for anti-reflection film, a coating processing group 50for anti-reflection film, and a first central robot CR1. The coatingprocessing group 50 is arranged opposite to the thermal processinggroups 100, 101 with the first central robot CR1 therebetween. The firstcentral robot CR1 has hands CRH1, CRH2 provided one above the other forreceiving and transferring the substrates W.

A partition wall 17 is arranged between the indexer block 9 and theanti-reflection film processing block 10 for shielding an atmosphere.The partition wall 17 has substrate platforms PASS1, PASS2 providedclosely one above the other for receiving and transferring thesubstrates W between the indexer block 9 and the anti-reflection filmprocessing block 10. The upper substrate platform PASS1 is used intransferring the substrates W from the indexer block 9 to theanti-reflection film processing block 10, and the lower substrateplatform PASS2 is used in transferring the substrates W from theanti-reflection film processing block 10 to the indexer block 9.

Each of the substrate platforms PASS1, PASS2 has an optical sensor (notshown) for detecting the presence or absence of a substrate W. Thisenables a determination to be made whether or not a substrate W is onthe substrate platform PASS1, PASS2. In addition, each of the substrateplatforms PASS1, PASS2 has a plurality of support pins secured thereto.Note that each of substrate platforms PASS3 to PASS12 mentioned belowsimilarly has such an optical sensor and support pins.

The resist film processing block 11 includes thermal processing groups110, 111 for resist film, a coating processing group 60 for resist film,and a second central robot CR2. The coating processing group 60 isarranged opposite to the thermal processing groups 110, 111 with thesecond central robot CR2 therebetween. The second central robot CR2 hashands CRH3, CRH4 provided one above the other for receiving andtransferring the substrates W.

A partition wall 18 is arranged between the anti-reflection filmprocessing block 10 and the resist film processing block 11 forshielding an atmosphere. The partition wall 18 has substrate platformsPASS3, PASS4 provided closely one above the other for receiving andtransferring the substrates W between the anti-reflection filmprocessing block 10 and the resist film processing block 11. The uppersubstrate platform PASS3 is used in transferring the substrates W fromthe anti-reflection film processing block 10 to the resist filmprocessing block 11. The lower substrate platform PASS4 is used intransferring the substrates W from the resist film processing block 11to the anti-reflection film processing block 10.

The development processing block 12 includes thermal processing groups120, 121 for development, a development processing group 70, and a thirdcentral robot CR3. The development processing group 70 is arrangedopposite to the thermal processing groups 120, 121 with the thirdcentral robot therebetween. The third central robot CR3 has hands CRH5,CRH6 provided one above the other for receiving and transferring thesubstrates W.

A partition wall 19 is arranged between the resist film processing block11 and the development processing block 12 for shielding an atmosphere.The partition wall 19 has substrate platforms PASS5, PASS6 providedclosely one above the other for receiving and transferring thesubstrates W between the resist film processing block 11 and thedevelopment processing block 12. The upper substrate platform PASS5 isused in transferring the substrates W from the resist film processingblock 11 to the development processing block 12, and the lower substrateplatform PASS6 is used in transferring the substrates W from thedevelopment processing block 12 to the resist film processing block 11.

The washing processing block 13 includes thermal processing groups 130,131 for post-exposure bake (PEB), a washing processing group 80, and afourth central robot CR4. The thermal processing group 131, adjacent tothe interface block 14, comprises the substrate platforms PASS9, PASS10as described below. The washing processing group 80 is arranged oppositeto the thermal processing groups 130, 131 with the fourth central robotCR4 therebetween. The fourth central robot CR4 has hands CRH7, CRH8provided one above the other for receiving and transferring thesubstrates W.

A partition wall 20 is arranged between the development processing block12 and the washing processing block 13 for shielding an atmosphere. Thepartition wall 20 has substrate platforms PASS7, PASS8 provided closelyone above the other for receiving and transferring the substrates Wbetween the development processing block 12 and the washing processingblock 13. The upper substrate platform PASS7 is used in transferring thesubstrates W from the development processing block 12 to the washingprocessing block 13, and the lower substrate platform PASS8 is used intransferring the substrates W from the washing processing block 13 tothe development processing block 12.

The interface block 14 includes a fifth central robot CR5, a buffer unitSBF, an interface transport mechanism IFR, and edge exposure units EEW.Return buffer units RBF and substrate platforms PASS11, PASS12 mentionedbelow are provided under the edge exposure units EEW. The fifth centralrobot CR5 has hands CRH9, CRH10 provided one above the other forreceiving and transferring the substrates W, and the interface transportmechanism IFR has hands CRH5, CRH6 provided one above the other forreceiving and transferring the substrates W

In the substrate processing apparatus 500 according to this embodiment,the indexer block 9, the anti-reflection film processing block 10, theresist film processing block 11, the development processing block 12,the washing processing block 13, and the interface block 14 aresequentially arranged in parallel along the Y direction.

FIG. 2 is a side view of the substrate processing apparatus 500 in FIG.1 that is seen from the +X direction.

The coating processing group 50 in the anti-reflection film processingblock 10 (see FIG. 1) includes a vertical stack of three coating unitsBARC. Each of the coating units BARC comprises a spin chuck 51 forrotating a substrate W while holding the substrate W in a horizontalattitude by suction, and a supply nozzle 52 for supplying coating liquidfor anti-reflection film to the substrate W held on the spin chuck 51.

The coating processing group 60 in the anti-reflection film processingblock 11 (see FIG. 1) includes a vertical stack of three coating unitsRES. Each of the coating units RES comprises a spin chuck 61 forrotating a substrate W while holding the substrate Win a horizontalattitude by suction, and a supply nozzle 62 for supplying coating liquidfor anti-reflection film to the substrate W held on the spin chuck 61.

The development processing group 70 in the development processing block12 (see FIG. 1) includes a vertical stack of five development processingunits DEV. Each of the development processing units DEV comprises a spinchuck 71 for rotating a substrate W while holding the substrate W in ahorizontal attitude by suction, and a supply nozzle 72 for supplyingdevelopment liquid to the substrate W held on the spin chuck 71.

The washing processing group 80 in the washing processing block 13 (seeFIG. 1) includes a vertical stack of three washing processing unitsSOAK. Each of the washing processing units SOAK applies washing anddrying processing to a substrate W. The washing processing units SOAKwill be described in detail below.

The interface block 14 includes a vertical stack of the two edgeexposure units EEW, return buffer unit RBF, substrate platforms PASS11,PASS12, and also includes the fifth central robot CR5 (see FIG. 1) andinterface transport mechanism IFR. Each of the edge exposure units EEWcomprises a spin chuck 98 for rotating a substrate W while holding thesubstrate W in a horizontal attitude by suction, and a light irradiator99 for subjecting a peripheral edge of the substrate W held on the spinchuck 98 to exposure.

FIG. 3 is a side view of the substrate processing apparatus 500 in FIG.1 that is seen from the −X direction.

In the anti-reflection film processing block 10, the thermal processinggroup 100 includes a vertical stack of two cooling units (coolingplates) CP, and the thermal processing unit 101 includes a verticalstack of four heating units (hot plates) HP and two cooling units CP.The thermal processing group 100 also includes a local controller LC ontop thereof for controlling the temperatures of the cooling units CP,and the thermal processing group 101 also includes a local controller LCon top thereof for controlling the temperatures of the heating units HPand the cooling units CP.

In the resist film processing block 11, the thermal processing group 110includes a vertical stack of four cooling units CP, and the thermalprocessing group 111 includes a vertical stack of four heating units HP.The thermal processing group 110 also includes a local controller LC ontop thereof for controlling the temperatures of the cooling units CP,and the thermal processing group 111 also includes a local controller LCon top thereof for controlling the temperatures of the heating units HP.

In the washing processing block 13, the thermal processing group 130includes a vertical stack of two heating units HP and two cooling unitsCP, and the thermal processing group 131 includes a vertical stack offour heating units HP, a cooling unit CP, the substrate platforms PASS9,PASS10, and a cooling unit CP. The thermal processing group 130 alsoincludes a local controller LC on top thereof for controlling thetemperatures of the heating units HP and the cooling units CP, and thethermal processing group 131 also includes a local controller LC on topthereof for controlling the temperatures of the heating units HP and thecooling units CP.

Next, the operation of the substrate processing apparatus 500 in thisembodiment will be described.

Carriers C for storing the substrates W in multiple stages are mountedon the carrier platforms 40, respectively, in the indexer block 9. Theindexer robot IR takes out a substrate W yet to be processed which isstored in a carrier C using the hand IRH for receiving and transferringthe substrates W. Then, the indexer robot IR moves in the ±X directionwhile rotating in the ±θ direction to transfer the unprocessed substrateW onto the substrate platform PASS1.

Although FOUPs (Front Opening Unified Pods) are adopted as the carriersC in this embodiment, SMIF (Standard Mechanical Inter Face) pods or OCs(Open Cassettes) that expose stored substrates W to outside air may alsobe used, for example. In addition, although linear-type transport robotsthat move their hands forward or backward by sliding them linearly to asubstrate W are used as the indexer robot IR, the first central robotCR1 to the fifth central robot CR5, and the interface transportmechanism IFR, multi joint type transport robots that linearly movetheir hands forward and backward by moving their joints may also beused.

The unprocessed substrate W that has been transferred onto the substrateplatform PASS1 is received by the first central robot CR1 in theanti-reflection film processing block 10. The first central robot CR1carries the substrate W into the thermal processing group 100 or 101.After this, the first central robot CR1 takes out the thermally treatedsubstrate W from the thermal processing group 100 or 101, and thencarries the substrate W into the coating processing group 50. Thecoating processing group 50 forms a coating of an anti-reflection filmover a lower portion of a photoresist film using a coating unit BARC, inorder to reduce a standing wave and halation that may be generatedduring exposure.

The first central robot CR1 subsequently takes out the substrate W afterthe coating processing from the coating processing group 50, and carriesthe substrate W into the thermal processing group 100 or 101. Then, thefirst central robot CR1 takes out the thermally treated substrate W fromthe thermal processing group 100 or 101, and transfers the substrate Wonto the substrate platform PASS3.

The substrate W on the substrate platform PASS3 is received by thesecond central robot CR2 in the resist film processing block 11. Thesecond central robot CR2 carries the substrate W into the thermalprocessing group 110 or 111. The second central robot CR2 then takes outthe thermally treated substrate W from the thermal processing group 110or 111, and carries the substrate W into the coating processing group60. In the coating processing group 60, a coating unit RES forms acoating of a resist film over the substrate W that is coated with theanti-reflection film.

After this, the second central robot CR2 takes out the substrate W afterthe coating processing from the coating processing group 60, and carriesthe substrate W into the thermal processing group 110 or 111. Then, thesecond central robot CR2 takes out the thermally treated substrate Wfrom the thermal processing group 110 or 111, and transfers thesubstrate W onto the substrate platform PASS5.

The substrate W on the substrate platform PASS5 is received by the thirdcentral robot CR3 in the development processing block 12. The thirdcentral robot CR3 transfers the substrate W onto the substrate platformPASS7.

The substrate W on the substrate platform PASS7 is received by thefourth central robot CR4 in the washing processing block 13. The fourthcentral robot CR4 carries the substrate W into the washing processinggroup 80. As described above, in the washing processing group 80, thesubstrate W is subjected to the washing and drying processing by thewashing processing unit SOAK.

The fourth central robot CR4 then takes out the substrate W after thewashing processing from the washing processing unit 80, and transfersthe substrate W to the substrate platform PASS9. The substrate W on thesubstrate platform PASS9 is received by the upper hand CRH9 of the fifthcentral robot CR5 in the interface block 14. The fifth central robot CR5carries the substrate W into an edge exposure unit EEW with the handCRH9. The edge exposure unit EEW subjects the peripheral portion of thesubstrate W to exposure processing.

Next, the fifth central robot CR5 takes out the substrate W after theedge exposure processing from the edge exposure unit EEW with the handCRH9. Then, the fifth central robot CR5 transfers the substrate W ontothe substrate platform PASS11 with the hand CRH9.

The substrate W transferred onto the substrate platform PASS11 iscarried into the exposure device 15 by the interface transport mechanismIFR. The substrate W is subjected to exposure processing by the exposuredevice 15, and then transferred onto the substrate platform PASS12 bythe interface transport mechanism IFR. The interface transport mechanismIFR will be described in detail below.

The substrate Won the substrate platform PASS12 is received by the lowerhand CRH10 of the fifth central robot CR5 in the interface block 14. Thefifth central robot CR5 carries the substrate W into the thermalprocessing group 131 in the washing processing block 13 with the handCRH10. The substrate W is subjected to a post-exposure bake (PEB) by thethermal processing group 131. In addition, the substrate W may also besubject to a post-exposure bake by the thermal processing group 130.

After this, the fifth central robot CR5 takes out the substrate W afterthe thermal processing from the thermal processing group 131, andtransports the substrate W onto the substrate platform PASS10. Thesubstrate W on the substrate platform PASS10 is received by the fourthcentral robot CR4 in the washing processing block 13. The fourth centralrobot CR4 transports the substrate W onto the substrate platform PASS8.

The substrate W on the substrate platform PASS8 is received by the thirdcentral robot CR3 in the development processing block 12. The thirdcentral robot CR3 carries the substrate W into the developmentprocessing group 70. The exposed substrate W is subjected to developmentprocessing by the development processing group 70. Then, the thirdcentral robot CR3 takes out the substrate W after the developmentprocessing from the development processing group 70, and carries thesubstrate W into the thermal processing groups 120, 121.

Then, the third central robot CR3 takes out the thermally treatedsubstrate W from the thermal processing groups 120, 120, and transportthe substrate W onto the substrate platform PASS6. The substrate W onthe platform PASS6 is transferred onto substrate platform PASS4 by thesecond central robot CR2 in the processing block 11. The substrate W onthe platform PASS4 is transferred onto substrate platform PASS2 by thefirst central robot CR2 in the processing block 10.

The substrate W on the substrate platform PASS2 is stored in a carrier Cby the indexer robot IR in the indexer block 9. Each of the processingto the substrate W in the substrate processing apparatus 500 is thuscompleted.

If the development processing group 80 is temporarily not capable ofapplying development processing to the substrate W by, e.g., a failure,the substrate W may temporarily be stored in the return buffer RBF1 inthe interface block 14 after the thermal treatment in the thermalprocessing group 131.

Now, the aforementioned washing processing units SOAK will be describedin detail with reference to drawings.

The configuration of a washing processing unit SOAK is first described.FIG. 4 is a diagram for use in illustrating the configuration of thewashing processing unit SOAK.

As shown in FIG. 4, the washing processing unit SOAK comprises a spinchuck 621 for rotating a substrate W about the vertical rotation axispassing through the center of the substrate W while horizontally holdingthe substrate W.

The spin chuck 621 is secured to an upper end of a rotation shaft 625,which is rotated via a chuck rotation-drive mechanism 636. An airsuction passage (not shown) is formed in the spin chuck 621. With thesubstrate W being mounted on the spin chuck 621, air inside the airsuction passage is discharged, so that a lower surface of the substrateW is sucked onto the spin chuck 621 by vacuum, and the substrate W canbe held in a horizontal attitude.

A first rotation motor 660 is arranged outside the spin chuck 621. Thefirst rotation motor 660 is connected to a first rotation shaft 661. Thefirst rotation shaft 661 is coupled to a first arm 662, which extends inthe horizontal direction, and whose end is provided with a nozzle 650for washing processing.

The first rotation shaft 661 is rotated by the first rotation motor 660,so that the first arm 662 swings. This causes the nozzle 650 to moveabove the substrate W held on the spin chuck 621.

A supply pipe 663 for washing processing is arranged so as to passthrough the inside of the first rotation motor 660, the first rotationshaft 661, and the first arm 662. The supply pipe 663 is connected to awashing liquid supply source R1 and a rinse liquid supply source R2through a valve Va and a valve Vb, respectively. By controlling theopening and closing of the valves Va, Vb, it is possible to select aprocessing liquid supplied to the supply pipe 663 and adjust the amountof the processing liquid. In the configuration of FIG. 4, when the valveVa is opened, washing liquid is supplied to the supply pipe 663, andwhen the valve Vb is opened, rinse liquid is supplied to the supply pipe663.

The washing liquid or the rinse liquid is supplied to the nozzle 650through the supply pipe 663 from the washing liquid supply source R1 orthe rinse liquid supply source R2. The washing liquid or the rinseliquid is thus supplied to a surface of the substrate W. Examples of thewashing liquid may include pure water, a pure water solution containinga complex (ionized), or a fluorine-based chemical solution. Examples ofthe rinse liquid may include pure water, carbonated water, hydrogenwater, electrolytic ionic water, and HFE (hydrofluoroether).

A second rotation motor 671 is arranged outside the spin chuck 621. Thesecond rotation motor 671 is connected to a second rotation shaft 672.The second rotation shaft 672 is coupled to a second arm 673, whichextends in the horizontal direction, and whose end is provided with anozzle 670 for drying processing.

The second rotation shaft 672 is rotated by the second rotation motor671, so that the second arm 673 swings. This causes the nozzle 670 tomove above the substrate W held on the spin chuck 621.

A supply pipe 674 for drying processing is arranged so as to passthrough the inside of the second rotation motor 671, the second rotationshaft 672, and the second arm 673. The supply pipe 674 is connected toan inert gas supply source R3 through a valve Vc. By controlling theopening and closing of the valve Vc, it is possible to adjust the amountof the inert gas supplied to the supply pipe 674.

The inert gas is supplied to the nozzle 670 through the supply pipe 674from the inert gas supply source R3. The inert gas is thus supplied tothe surface of the substrate W. Nitrogen gas (N₂), for example, may beused as the inert gas.

When supplying the washing liquid or the rinse liquid onto the surfaceof the substrate W, the nozzle 650 is positioned above the substrate.When supplying the inert gas onto the surface of the substrate W, thenozzle 650 is retracted to a predetermined position.

When supplying the washing liquid or the rinse liquid onto the surfaceof the substrate W, the nozzle 670 is retracted to a predeterminedposition. When supplying the inert gas onto the surface of the substrateW, the nozzle 670 is positioned above the substrate W.

The substrate W held on the spin chuck 621 is housed in a processing cup623. A cylindrical partition wall 633 is provided inside the processingcup 623. A discharge space 631 is formed so as to surround the spinchuck 621 for discharging the processing liquid (i.e., washing liquid orrinse liquid) used in processing the substrate W. Also, a liquidrecovery space 632 is formed between the processing cup 623 and thepartition wall 633, so as to surround the discharge space 631, forrecovering the processing liquid used in processing the substrate W.

The discharge space 631 is connected with a discharge pipe 634 fordirecting the processing liquid to a liquid discharge processing device(not shown), while the liquid recovery space 632 is connected with arecovery pipe 635 for directing the processing liquid to a recoveryprocessing device (not shown).

A guard 624 is provided above the processing cup 623 for preventing theprocessing liquid on the substrate W from splashing outward. The guard624 is configured to be rotation-symmetric with respect to the rotationshaft 625. An annular-shaped liquid discharge guide groove 641 with aV-shaped cross section is formed inwardly of an upper end portion of theguard 624.

Also, a liquid recovery guide 642 having an inclined surface thatinclines down outwardly is formed inwardly of a lower portion of theguard 624. A partition wall housing groove 643 for receiving thepartition wall 633 in the processing cup 623 is formed in the vicinityof the upper end of the liquid recovery guide 642.

This guard 624 is provided with a guard lifting mechanism (not shown)composed of a ball-screw mechanism or the like. The guard liftingmechanism lifts and lowers the guard 624 between a recovery position inwhich the liquid recovery guide 642 is positioned opposite to outeredges of the substrate W held on the spin chuck 621 and a dischargeposition in which the liquid discharge guide groove 641 is positionedopposite to the outer edges of the substrate W held on the spin chuck621. When the guard 624 is in the recovery position (i.e., the positionof the guard shown in FIG. 4), the processing liquid splashed out fromthe substrate W is directed by the liquid recovery guide 642 to theliquid recovery space 632, and then recovered through the recovery pipe635. On the other hand, when the guard 624 is in the discharge position,the processing liquid splashed out from the substrate W is directed bythe liquid discharge guide groove 641 to the discharge space 631, andthen discharged through the discharge pipe 634. With such aconfiguration, discharge and recovery of the processing liquid isperformed.

The processing operation of the washing processing unit SOAK having theaforementioned configuration is next described. Note that the operationof each component in the washing processing unit SOAK described below iscontrolled by the main controller 30 in FIG. 1.

When the substrate W is initially carried into the washing processingunit SOAK, the guard 624 is lowered, and the fourth central robot CR4 inFIG. 1 places the substrate W onto the spin chuck 621. The substrate Won the spin chuck 621 is held by suction.

Next, the guard 624 moves to the aforementioned discharge position, andthe nozzle 650 moves above the center of the substrate W. Then, therotation shaft 625 rotates, causing the substrate W held on the spinchuck 621 to rotate. After this, the washing liquid is discharged ontothe top surface of the substrate W from the nozzle 650. The substrate Wis thus washed, and part of the component of the resist on the substrateW is eluted in the washing liquid. During the washing, the substrate Wis rotated as the washing liquid is supplied onto the substrate W. Thiscauses the washing liquid on the substrate W to constantly move toward aperipheral portion of the substrate W by the centrifugal force, andsplashed away. It is therefore possible to prevent the component of theresist eluted in the washing liquid from remaining on the substrate W.Note that the aforementioned resist component may be eluted with purewater being poured onto the substrate Wand kept thereon for a certainperiod. The supply of the washing liquid onto the substrate W may alsobe executed by a soft spray method using a two-fluid nozzle.

After the elapse of a predetermined time, the supply of the washingliquid is stopped, and the rinse liquid is discharged from the nozzle650. The washing liquid on the substrate W is thus washed away. As aresult, it is possible to reliably prevent the resist components elutedin the washing liquid from remaining on the substrate W.

After the elapse of another predetermined time, the rotation speed ofthe rotation shaft 625 decreases. This reduces the amount of the rinseliquid that is shaken off by the rotation of the substrate W, resultingin the formation of a liquid layer L of the rinse liquid over the entiresurface of the substrate W, as shown in FIG. 5 (a). Alternatively, therotation of the rotation shaft 625 may be stopped to form the liquidlayer L over the entire surface of the substrate W.

The embodiment employs the configuration in which the nozzle 650 is usedfor supplying both the washing liquid and the rinse liquid, so as tosupply both the washing liquid and the rinse liquid from the nozzle 650.However, a configuration may also be employed in which nozzles areseparately provided for supplying the washing liquid and the rinseliquid.

In order to prevent the rinse liquid from flowing to the back surface ofthe substrate W during the supply of the rinse liquid, pure water may besupplied to the back surface of the substrate W using a back rinsingnozzle (not shown).

Note that when using pure water as the washing liquid for washing thesubstrate W, it is not necessary to supply the rinse liquid.

The supply of the rinse liquid is subsequently stopped, and the nozzle650 retracts to the predetermined position while the nozzle 670 movesabove the center of the substrate W. The inert gas is subsequentlydischarged from the nozzle 670. This causes the rinse liquid around thecenter of the substrate W to move toward the peripheral portion of thesubstrate W, leaving the liquid layer L only on the peripheral portion,as shown in FIG. 5 (b).

Next, as the number of revolutions of the rotation shaft 625 (see FIG.4) increases, the nozzle 670 gradually moves from above the center ofthe substrate W to above the peripheral portion thereof, as shown inFIG. 5 (c). This causes a great centrifugal force acting on the liquidlayer L on the substrate W while allowing the inert gas to be sprayedtoward the entire surface of the substrate W, thereby ensuring theremoval of the liquid layer L on the substrate W. As a result, thesubstrate W can be reliably dried.

Then, the supply of the inert gas is stopped, and the nozzle 670retracts to the predetermined position while the rotation of therotation shaft 625 is stopped. After this, the guard 624 is lowered, andthe fourth central robot CR4 in FIG. 1 carries the substrate W out ofthe washing processing unit SOAK. The processing operation of thewashing processing unit SOAK is thus completed.

It is preferred that the position of the guard 624 during washing anddrying processing is suitably changed according to the necessity of therecovery or discharge of the processing liquid.

Moreover, although the washing processing unit SOAK shown in FIG. 4includes the nozzle 650 for washing processing and the nozzle 670 fordrying processing separately, the nozzle 650 and the nozzle 670 may alsobe formed integrally, as shown in FIG. 6. This obviates the need to moveeach of the nozzle 650 and the nozzle 670 separately during the washingor drying processing to the substrate W, thereby simplifying the drivingmechanism.

A nozzle 770 for drying processing as shown in FIG. 7 may also be usedinstead of the nozzle 670 for drying processing.

The nozzle 770 in FIG. 7 extends vertically downward, and also hasbranch pipes 771, 772 that extend obliquely downward from sides thereof.A gas discharge port 770 a is formed at the lower end of the branch pipe771, a gas discharge port 770 b at the lower end of the nozzle 770, anda gas discharge port 770 c at the lower end of the branch pipe 772, eachfor discharging an inert gas. The discharge port 770 b discharges aninert gas vertically downward, and the discharge ports 770 a, 770 c eachdischarge an inert gas obliquely downward, as indicated by the arrows inFIG. 7. That is to say, the nozzle 770 discharges the inert gas so as toincrease the spraying area downwardly.

Now, a washing processing unit SOAK using the nozzle 770 for dryingprocessing applies drying processing to the substrate W as will bedescribed below.

FIGS. 8 (a), 8 (b), 8 (c) are diagrams for use in illustrating a methodof applying drying processing to the substrate W using the nozzle 770.

Initially, a liquid layer L is formed on a surface of the substrate W bythe method as described in FIG. 5 (a), and then the nozzle 770 movesabove the center of the substrate W, as shown in FIG. 8 (a). After this,an inert gas is discharged from the nozzle 770. This causes the rinseliquid on the center of the substrate W to move to the peripheralportion of the substrate W, leaving the liquid layer L only on theperipheral portion of the substrate W, as shown in FIG. 8 (b). At thetime, the nozzle 770 is brought close to the surface of the substrate Wso as to reliably move the rinse liquid present on the center of thesubstrate W.

Next, as the number of revolutions of the rotation shaft 625 (see FIG.4) increases, the nozzle 770 moves upward as shown in FIG. 8 (c). Thiscauses a great centrifugal force acting on the liquid layer L on thesubstrate W while increasing the area to which the inert gas is sprayedon the substrate W. As a result, the liquid layer L on the substrate Wcan be reliably removed. Note that the nozzle 770 can be moved up anddown by lifting and lowering the second rotation shaft 672 via arotation shaft lifting mechanism (not shown) provided to the secondrotation shaft 672 in FIG. 4.

Alternatively, a nozzle 870 for drying processing as shown in FIG. 9 maybe used instead of the nozzle 770. The nozzle 870 in FIG. 9 has adischarge port 870 a whose diameter gradually increases downward. Thisdischarge port 870 a discharges an inert gas vertically downward andobliquely downward as indicated by the arrows in FIG. 9. That is,similarly to the nozzle 770 in FIG. 7, the nozzle 870 discharges theinert gas so as to increase the spraying area downwardly. Consequently,drying processing similar to that using the nozzle 770 can be applied tothe substrate W using the nozzle 870.

A washing processing unit SOAKa as shown in FIG. 10 may also be usedinstead of the washing processing unit SOAK shown in FIG. 4.

The washing processing unit SOAKa in FIG. 10 is different from thewashing processing unit SOAK in FIG. 4 as described below.

The washing processing unit SOAKa in FIG. 10 includes above the spinchuck 621 a disk-shaped shield plate 682 having an opening through thecenter thereof. A support shaft 689 extends vertically downward fromaround an end of an arm 688, and the shield plate 682 is mounted at alower end of the support shaft 689 so as to oppose the top surface ofthe substrate W held on the spin chuck 621.

A gas supply passage 690 that communicates with the opening of theshield plate 682 is inserted into the inside of the support shaft 689. Anitrogen gas (N₂), for example, is supplied into the gas supply passage690.

The arm 688 is connected with a shield plate lifting mechanism 697 and ashield plate rotation-driving mechanism 698. The shield plate liftingmechanism 697 lifts and lowers the shield plate 682 between a positionclose to the top surface of the substrate W held on the spin chuck 621and a position upwardly away from the spin chuck 621.

During the drying processing to the substrate W in the washingprocessing unit SOAKa in FIG. 10, with the shield plate 682 broughtclose to the substrate W as shown in FIG. 11, an inert gas is suppliedto clearance between the substrate W and the shield plate 682 from thegas supply passage 690. This allows the inert gas to be efficientlysupplied from the center of the substrate W to the peripheral portionthereof, thereby ensuring the removal of the liquid layer L on thesubstrate W.

Although in the above-described embodiment, the substrate W is subjectedto drying processing by spin drying in the washing processing unit SOAK,the substrate W may be subjected to drying processing by other methodssuch as a reduced pressure drying method or an air knife drying method.

Although in the above-described embodiment, the inert gas is suppliedfrom the nozzle 670 with the liquid layer L of the rinse liquid beingformed, the following method may be applied when the liquid layer L ofthe rinse liquid is not formed or the rinse liquid is not used.

That is, the liquid layer of washing liquid is shaken off once byrotating the substrate W, and an inert gas is then immediately suppliedfrom the nozzle 670 to thoroughly dry the substrate W.

As described above, in the substrate processing apparatus 500 accordingto the embodiment, the substrate W is subjected to the washingprocessing by the washing processing group 80 in the washing processingblock 13 before the exposure processing by the exposure device 15.During this washing processing, part of the component of the resist onthe substrate W is eluted in the washing liquid or the rinse liquid, andwashed away. Therefore, even if the substrate W is in contact withliquid in the exposure device 15, the component of the resist on thesubstrate W is hardly eluted in the liquid. This prevents contaminationinside the exposure device 15 while preventing the component of theresist eluted in the washing liquid from remaining on the substrate W.

Moreover, the washing processing unit SOAK applies the drying processingto the substrate W after the washing processing, which prevents theattachment of particles and the like in the atmosphere to the substrateW while transporting the substrate W after the washing processing. Thisprevents the contamination of the substrate W, which prevents thecontamination inside the exposure device 15.

In addition, since the washing processing block 13 is arranged adjacentto the interface block 14, the substrate W is subjected to the washingprocessing immediately before the exposure processing by the exposuredevice 15. Therefore, this enables the transport route for the substrateW after the washing processing to the exposure device 15 to beshortened. This prevents the attachment of particles and the like in theatmosphere to the substrate W in the transport process after the washingprocessing, which prevents the contamination of the substrate W.

As a result of foregoing, the processing defects of the substrate W thatmay be generated in the exposure device 15 can be reduced.

Moreover, the washing processing unit SOAK applies the drying processingto the substrate W by spraying the inert gas onto the substrate W fromthe center to the peripheral portion thereof while rotating thesubstrate W. This ensures that the washing liquid and the rinse liquidare removed from the substrate W, which reliably prevents the attachmentof particles and the like in the atmosphere on the washed substrate W.It is thus possible to reliably prevent the contamination of thesubstrate W and the generation of dry marks on the surface of thesubstrate W.

Also, it is possible to reliably prevent the washing liquid and therinse liquid from remaining on the washed substrate W, which reliablyprevents further elution of the resist component in the washing liquidand the rinse liquid during the transport of the substrate W from thewashing processing unit SOAK to the exposure device 15. It is thuspossible to reliably prevent a defective shape of the resist film andthe contamination inside the exposure device 15.

As a result of the foregoing, processing defects of the substrate W canbe reliably prevented.

In addition, since the substrate processing apparatus 500 according tothe embodiment has the structure in which the washing processing block13 is added to an existing substrate processing apparatus, processingdefects that may be generated during the exposure processing and afterthe exposure processing can be reduced at low cost.

The interface transport mechanism IFR is next described. FIG. 12 is adiagram for illustrating the configuration and the operation of theinterface transport mechanism IFR.

The configuration of the interface transport mechanism IFR is firstdescribed. As shown in FIG. 12, the movable base 31 in the interfacetransport mechanism IFR is threadably mounted to a screwed shaft 32. Thescrewed shaft 32 is rotatably supported with support bases 33 so as toextend in the X direction. One end of the screwed shaft 32 is providedwith a motor M1, which causes the screwed shaft 32 to rotate and themovable base 31 to horizontally move in the ±X direction

A hand support base 34 is mounted on the movable base 31 so as to rotatein the ±θ direction while moving up and down in the ±Z direction. Thehand support base 34 is coupled to a motor M2 in the movable base 31through a rotation shaft 35, and rotated by the motor M2. Two hands H5,H6 for holding the substrate W in a horizontal attitude are mounted tothe hand support base 34 one above the other, so as to move forward andbackward.

The operation of the interface transport mechanism IFR is nextdescribed. The operation of the interface transport mechanism IFR iscontrolled by the main controller 30 in FIG. 1.

The interface transport mechanism IFR initially rotates the hand supportbase 34 at the position A in FIG. 12 while lifting the hand support base34 in the +Z direction, to allow the upper hand H5 to enter thesubstrate platform PASS11. When the hand H5 has received the substrate Win the substrate platform PASS11, the interface transport mechanism IFRretracts the hand H5 from the substrate platform PASS11, and lowers thehand support base 34 in the −Z direction.

The interface transport mechanism IFR subsequently moves in the −Xdirection, and rotates the hand support base 34 at the position B whileallowing the hand H5 to enter a substrate inlet 15 a (see FIG. 1) in theexposure device 15. After the hand H5 has carried the substrate W intothe substrate inlet 15 a, the interface transport mechanism IFR retractsthe hand H5 from the substrate inlet 15 a.

Then, the interface transport mechanism IFR allows the lower hand H6 toenter a substrate inlet 15 b (see FIG. 1) in the exposure device 15.When the hand H6 has received the substrate W in the substrate inlet 15b, the interface transport mechanism retracts the hand H6 from thesubstrate inlet 15 b.

The interface transport mechanism IFR subsequently moves in the +Xdirection, and rotates the hand support base 34 at the position A toallow the hand H5 to enter the substrate platform PASS12 and transferthe substrate W onto the substrate platform PASS12.

If the exposure device 15 is not capable of receiving the substrate Wduring the transport of the substrate W from the substrate platformPASS11 to the exposure device 15, the substrate W is transported to thebuffer unit SBF once, and waits there until the exposure device 15becomes capable of receiving the substrate W.

As described above, in this embodiment, the interface transportmechanism IFR employs the hand H5 during the transport of the substrateW from the substrate platform PASS11 to the exposure device 15, andemploys the hand H6 when carrying the substrate W from the exposuredevice 15 to the substrate platform PASS12. That is, the hand H6 is usedin transporting the substrate W to which a liquid is attached after theexposure processing, and the hand H5 is used in transporting thesubstrate W to which no liquid is attached before the exposureprocessing. This prevents the liquid on the substrate W from attachingto the hand H5.

Moreover, the hand H6 is arranged below the hand H5, so that even if aliquid drops from the hand H6 and the substrate W held thereon, theliquid will not attach to the hand H5 and the substrate W held thereon.

Furthermore, as described above, the fifth central robot CR5 alsoemploys the lower hand CRH10 during the transport of the substrate W towhich a liquid is attached after the exposure processing (between thesubstrate platform PASS12 and the thermal processing group 131), andemploys the upper hand CRH9 during the transport of the substrate W towhich no liquid is attached before the exposure processing (between thesubstrate platform PASS9 and the edge exposure units EEW, and betweenthe edge exposure units EEW and the substrate platform PASS11). Thisprevents a liquid from attaching to the substrate W before the exposureprocessing also in the fifth central robot CR5.

As a result of the foregoing, a liquid is prevented from attaching tothe substrate W before the exposure processing, which prevents thecontamination of the substrate W due to the attachment of particles andthe like in the atmosphere. This prevents the generation of processingdefects of the substrate W of the exposure device 15.

Although in this embodiment, the single interface transport mechanismIFR is used for transporting the substrate W from the substrate platformPASS11 to the exposure device 15, from the exposure device 15 to thesubstrate platform PASS12, a plurality of interface transport mechanismsIFR may also be used for transporting the substrate W.

The operation and the configuration of the interface transport mechanismIFR may also be modified according to the positions of the substrateinlet 15 a and the substrate outlet 15 b of the exposure device 15. Forexample, where the substrate inlet 15 a and the substrate outlet 15 b ofthe exposure device 15 are positioned opposite to the position A in FIG.12, the screwed shaft 32 of FIG. 12 may not be provided.

Furthermore, the numbers of the coating units BARC, RES, the developmentprocessing units DEV, the washing processing units SOAK, the heatingunits HP, and the cooling units CP may suitably be changed according tothe processing speed of each processing block.

Furthermore, a two-fluid nozzle shown in FIG. 13 may also be used in thewashing processing unit SOAK, instead of one or both the nozzle 650 forwashing processing and the nozzle 670 for drying processing shown inFIG. 4

FIG. 13 is a longitudinal cross section showing an example of theinternal structure of the two-fluid nozzle 950 for use in washing anddrying processing. The two-fluid nozzle 950 is capable of selectivelydischarging a gas, a liquid, and a fluid mixture of the gas and liquid.

The two-fluid nozzle 950 in this embodiment is so-called an external-mixtype. The external-mix type two-fluid nozzle 950 shown in FIG. 13comprises an inner body portion 311 and an outer body portion 312. Theinner body portion 311 is composed of, e.g., quartz, and the outer bodyportion 312 is composed of a fluororesin such as PTFE(polytetrafluoroethylene).

A cylindrical liquid passage 311 b is formed along the central axis ofthe inner body portion 311. The liquid passage 311 b is provided withthe supply pipe 663 shown in FIG. 4 for washing processing. Washingliquid or rinse liquid supplied from the supply pipe 663 is thusintroduced into the liquid passage 311 b.

A liquid discharge port 311 a that communicates with the liquid passage311 b is formed at a lower end of the inner body portion 311. The innerbody portion 311 is inserted into the outer body portion 312. Upper endsof the inner body portion 311 and the outer body portion 312 are joinedtogether, while lower ends thereof are not joined.

A cylindrical gas passage 312 b is formed between the inner body portion311 and the outer body portion 312. A gas discharge port 312 a thatcommunicates with the gas passage 312 b is formed at the lower end ofthe outer body portion 312. The supply pipe 674 shown in FIG. 4 fordrying processing is mounted to a peripheral wall of the outer bodyportion 312, so as to communicate with the gas passage 312 b. An inertgas supplied from the supply pipe 674 is thus introduced into the gaspassage 312 b.

The diameter of the gas passage 312 b decreases downward in the vicinityof the gas discharge port 312 a. As a result, the velocity of flow ofthe inert gas is accelerated, and the inert gas is discharged from thegas discharge port 312 a.

The washing liquid discharged from the liquid discharge port 311 a andthe inert gas discharged from the gas discharge port 312 a are mixedoutside near the lower end of the two-fluid nozzle 950 to generate amist-like fluid mixture that contains fine droplets of the washingliquid.

FIGS. 14 (a), 14 (b), 14 (c) are diagrams for use in illustrating amethod of applying drying processing to the substrate W using thetwo-fluid nozzle 950 in FIG. 13.

The substrate W is initially held on the spin chuck 621 by suction, asshown in FIG. 4, and rotates together with the rotation of the rotationshaft 625. The rotation speed of the rotation shaft 625 is, e.g., about500 rpm.

In this state, as shown in FIG. 14 (a), the two-fluid nozzle 950discharges the mist-like fluid mixture of the washing liquid and theinert gas onto the top surface of the substrate W while gradually movingfrom above the center of the substrate W to above the peripheral portionthereof. In this way, the fluid mixture is sprayed onto the entiresurface of the substrate W from the two-fluid nozzle 950 to wash thesubstrate W.

Next, the supply of the fluid mixture is stopped, and the rotation speedof the rotation shaft 625 decreases while the rinse liquid is dischargedfrom the two-fluid nozzle 950 onto the substrate W, as shown in FIG. 14(b). The rotation speed of the rotation shaft 625 is, e.g., about 10rpm. A liquid layer L of the rinse liquid is thus formed on the entiresurface of the substrate W. Alternatively, the rotation of the rotationshaft 625 may be stopped to form the liquid layer L on the entiresurface of the substrate W. When pure water is used as the washingliquid in the fluid mixture for washing the substrate W, the supply ofthe rinse liquid may be omitted.

After the formation of the liquid layer L, the supply of the rinseliquid is stopped. Then, the inert gas is discharged onto the substrateW from the two-fluid nozzle 950, as shown in FIG. 14 (c). This causesthe washing liquid on the center of the substrate W to move to theperipheral portion of the substrate W, leaving the liquid layer L onlyon the peripheral portion.

Then, the rotation speed of the rotation shaft 625 increases. Therotation speed of the rotation shaft 625 is, e.g., about 100 rpm. Thiscauses a great centrifugal force acting on the liquid layer L on thesubstrate W, allowing the removal of the liquid layer L on the substrateW. As a result, the substrate W is dried.

The two-fluid nozzle 950 may gradually move from above the center of thesubstrate W to above the peripheral portion thereof when removing theliquid layer L on the substrate W. This allows the inert gas to besprayed to the entire surface of the substrate W, which ensures theremoval of the liquid layer L on the substrate W. As a result, thesubstrate W can be reliably dried.

As described above, the fluid mixture discharged from the two-fluidnozzle 950 contains fine droplets of the washing liquid. Therefore, evenif the surface of the substrate W has irregularities, any contaminantsattached on the surface of the substrate W can be stripped off. Thecontaminants on the surface of the substrate W can thus be reliablyremoved. Moreover, even if the films on the substrate W have lowwettability, the fine droplets of the washing liquid strip off thecontaminants on the surface of the substrate W, so that the contaminantscan be reliably removed from the surface of the substrate W.

As a result, even if the solvent or the like in a resist is sublimatedin the thermal processing units HP and the sublimates are attached tothe substrate W again when thermal processing is applied to thesubstrate W by the thermal processing units HP before the exposureprocessing, the sublimates attached to the substrate W can be reliablyremoved by the washing processing units SOAK. It is therefore possibleto reliably prevent the contamination inside the exposure device 14.

In addition, adjusting the flow rate of the inert gas allows adjustmentsto be easily made to the detergency in washing the substrate W. Thus,when the organic films (i.e., a resist film) on the substrate W areprone to damage, damage to the organic films on the substrate W can beprevented by weakening the detergency. Tough contaminants on the surfaceof the substrate W can also be removed reliably by strengthening thedetergency. By adjusting the detergency in this way according to theproperties of the organic films on the substrate W and the degree ofcontamination, it is possible to prevent damage to the organic films onthe substrate W and wash the substrate W reliably.

Moreover, the external-mix type two-fluid nozzle 950 generates the fluidmixture by mixing the washing liquid and the inert gas outside thetwo-fluid nozzle 950. The inert gas and the washing liquid flow throughthe separate flow passages, respectively, in the two-fluid nozzle 950.This prevents the washing liquid from remaining in the gas passage 312b, allowing the inert gas to be discharged independently from thetwo-fluid nozzle 950. Also, the rinse liquid can be dischargedindependently from the two-fluid nozzle 950 by supplying the rinseliquid from the supply pipe 663. This allows the fluid mixture, theinert gas, and the rinse liquid to be selectively discharged from thetwo-fluid nozzle 950.

Furthermore, the use of the two-fluid nozzle 950 obviates the need toprovide nozzles for supplying the washing liquid or the rinse liquid tothe substrate W and for supplying the inert gas to the substrate Wseparately. This provides reliable washing and drying of the substrate Wwith a simple structure.

Although, in this embodiment, the two-fluid nozzle 950 is used to supplythe rinse liquid to the substrate W, a separate nozzle may also be usedfor supplying the rinse liquid to the substrate W.

Moreover, in this embodiment, although the two-fluid nozzle 950 is usedto supply the inert gas to the substrate W, a separate nozzle may alsobe used for supplying the inert gas to the substrate W.

In this embodiment, the anti-reflection film processing block 10, theresist film processing block 11, the development processing block 12,and the washing processing block 13 correspond to a processing section;the interface block 14 corresponds to an interface; the indexer block 9corresponds to an indexer; the coating units RES correspond to a firstprocessing unit; the resist film processing block 11 corresponds to afirst processing block; the development processing units DEV correspondto a second processing unit; the development processing block 12corresponds to a second processing block; the washing processing unitsSOAK, SOAKa correspond to a third processing unit; the washingprocessing block 13 corresponds to a third processing block; the coatingunits BARC correspond to a fourth processing unit; the anti-reflectingfilm processing block 10 corresponds to a fourth processing block; andthe resist film correspond to a photosensitive film.

The heating units HP and the cooling units CP correspond to a first tofourth thermal processing units; the second central robot CR2corresponds to a first transport unit; the third central robot CR3corresponds to a second transport unit; the fourth central robot CR4corresponds to a third transport unit; the first central robot CR1corresponds to a fourth transport unit; the fifth central robot CR5corresponds to a fifth transport unit; the interface transport mechanismIFR corresponds to a sixth transport unit; the hand CRH9 corresponds toa first holder; the hand CRH10 corresponds to a second holder; the handH5 corresponds to a third holder; the hand H6 corresponds to a fourthholder; and the platforms PASS11, PASS12 correspond to a platform.

The spin chuck 621 corresponds to a substrate holding device; therotation shaft 625 and the chuck rotation-drive mechanism 636 correspondto a rotation-drive device; the nozzle 650 for washing processingcorresponds to a washing liquid supplier and a rinse liquid supplier;and the nozzles 670, 770, 870 for drying processing correspond to aninert gas supplier.

The two-fluid nozzle 950 corresponds to a fluid nozzle; the liquidpassage 311 b corresponds to a liquid flow passage; and the gas passage312 b corresponds to a gas flow passage.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spiritand scope of the present invention being limited only by the terms ofthe appended claims.

What is claimed is:
 1. A method of processing a substrate in a substrateprocessing apparatus that is arranged adjacent to an exposure devicethat applies exposure processing to a substrate by a liquid immersionmethod, and includes first, second and third processing units, themethod comprising the steps of: forming a photosensitive film made of aphotosensitive material on an upper surface of the substrate by thefirst processing unit before the exposure processing by the exposuredevice; rotating the substrate about an axis vertical to the substratewhile holding the substrate substantially horizontally in the secondprocessing unit after the formation of the photosensitive film by thefirst processing unit and before the exposure processing by the exposuredevice; forming a liquid layer of a rinse liquid on a whole uppersurface of the photosensitive film on the rotated substrate, topreviously allow part of a component of the photosensitive materialwithin the photosensitive film to be eluted in the liquid layer fromwithin the photosensitive film in the second processing unit such thatthe component of the photosensitive material within the photosensitivefilm is not eluted from within the photosensitive film on the substrateduring the exposure processing by the exposure device; removing theliquid layer on the photosensitive film after the part of the componentof the photosensitive material is eluted; transporting the substrateafter the removal of the liquid layer to the exposure device to applythe exposure processing to the photosensitive film on the substrate bythe exposure device; and applying development processing to thesubstrate by the third processing unit after the exposure processing bythe exposure device.
 2. The substrate processing method according toclaim 1, wherein the step of forming the liquid layer of the rinseliquid includes forming the liquid layer of the rinse liquid having anupper surface that is exposed to atmosphere and in a free state on theupper surface of the photosensitive film on the substrate.
 3. Thesubstrate processing method according to claim 1, further comprising thestep of applying thermal processing to the photosensitive film on thesubstrate after the formation of the photosensitive film by the firstprocessing unit and before the exposure processing by the exposuredevice, wherein the step of forming the liquid layer of the rinse liquidincludes forming the liquid layer of the rinse liquid on a dried surfaceof the photosensitive film on the substrate after the thermal processingand before the exposure processing by the exposure device.
 4. A methodof processing a substrate in a substrate processing apparatus that isarranged adjacent to an exposure device that applies exposure processingto a substrate by a liquid immersion method, and includes first, secondand third processing units, the method comprising the steps of: forminga photosensitive film made of a photosensitive material on an uppersurface of the substrate by the first processing unit before theexposure processing by the exposure device; rotating the substrate aboutan axis vertical to the substrate while holding the substratesubstantially horizontally in the second processing unit after theformation of the photosensitive film by the first processing unit andbefore the exposure processing by the exposure device; supplying a rinseliquid onto the photosensitive film on the rotated substrate such that aliquid layer of the rinse liquid is formed on a whole upper surface ofthe photosensitive film on the substrate in the second processing unit;holding the liquid layer on the upper surface of the photosensitive filmon the rotated substrate such that part of a component of thephotosensitive material within the photosensitive film is eluted in theliquid layer from within the photosensitive film; removing the liquidlayer on the photosensitive film in the second processing unit after thepart of the component of the photosensitive material is eluted;transporting the substrate after the removal of the liquid layer to theexposure device to apply the exposure processing to the photosensitivefilm on the substrate by the exposure device; and applying developmentprocessing to the substrate by the third processing unit after theexposure processing by the exposure device.
 5. A method of processing asubstrate in a substrate processing apparatus that is arranged adjacentto an exposure device that applies exposure processing to a substrate bya liquid immersion method, and includes first, second and thirdprocessing units, the method comprising the steps of: forming aphotosensitive film made of a photosensitive material on an uppersurface of the substrate by the first processing unit before theexposure processing by the exposure device; rotating the substrate aboutan axis vertical to the substrate while holding the substratesubstantially horizontally in the second processing unit after theformation of the photosensitive film by the first processing unit andbefore the exposure processing by the exposure device; forming a liquidlayer of a rinse liquid on a whole upper surface of the photosensitivefilm on the rotated substrate by supplying the rinse liquid onto thephotosensitive film on the substrate such that part of a component ofthe photosensitive material of the photosensitive film is eluted in theliquid layer in the second processing unit; stopping the supply of therinse liquid after the formation of the liquid layer; removing theliquid layer on the photosensitive film after the stopping of the supplyof the rinse liquid; transporting the substrate after the removal of theliquid layer to the exposure device to apply the exposure processing tothe photosensitive film on the substrate by the exposure device; andapplying development processing to the substrate by the third processingunit after the exposure processing by the exposure device, wherein thestep of forming the liquid layer includes previously allowing the partof the component of the photosensitive material within thephotosensitive film to be eluted in the liquid layer from within thephotosensitive film such that the component of the photosensitivematerial within the photosensitive film is not eluted from within thephotosensitive film on the substrate during the exposure processing bythe exposure device.